NAME

Physics::Electrodeposition::Pattern - Extract plating geometry (open area, pattern density, feature CD, loading non-uniformity) from a GDSII mask.

SYNOPSIS

use Physics::Electrodeposition::Pattern;

my $pat = Physics::Electrodeposition::Pattern->new(
    file  => 'bumps.gds',
    layer => 1,               # plating-opening layer
    grid  => 16,
);

printf "open fraction = %.3f\n", $pat->open_fraction;
printf "%d features, CD %.2f um\n", $pat->feature_count, ($pat->cd_stats)[1];
printf "loading WIDNU = %.1f %%\n", $pat->loading_nonuniformity;

DESCRIPTION

Given a GDSII layout (via a Physics::Electrodeposition::GDSII object or a file path) and an optional layer/datatype selection, computes the geometric inputs a through-mask electrodeposition model needs: total open (plating) area, pattern density (open fraction), feature count and critical-dimension statistics, a gridded pattern-density map, and loading (pattern-density) non-uniformity estimates.

Openings are assumed non-overlapping (standard for a mask layer); polygon areas are summed by the shoelace formula and no Boolean union is performed. Density mapping bins each opening by its centroid, which is accurate when features are small relative to the map cell size.

METHODS

open_fraction

Pattern density: summed opening area divided by the field bounding-box area.

feature_count / open_area_um2 / field_area_um2 / bbox

Basic geometry.

cd_stats

Returns ($min, $mean, $max) opening critical dimension in micrometres.

mean_feature_diameter

Equivalent circular diameter of the mean opening (um).

density_map

Arrayref of local pattern densities over a grid x grid map.

loading_nonuniformity([$exponent])

Estimated within-die thickness non-uniformity (%) from pattern-density loading; thickness ~ density**(-exponent), default exponent 0.5.

isolated_to_dense_ratio([$exponent])

Plated-thickness ratio of the most isolated to the densest region.

radial_profile([$nzones]) / radial_nonuniformity([$exponent])

Radial (center-to-edge) density profile and the resulting within-wafer non-uniformity (%), for wafer-scope masks.