/ 
Physics-Etch-0.01
/ Physics::Etch::DryEtch

NAME

Physics::Etch::DryEtch - anisotropic plasma / RIE dry etch model

SYNOPSIS

use Physics::Etch::DryEtch;

my $etch = Physics::Etch::DryEtch->new(
    target      => 'silicon_nitride',
    etchant     => 'CF4/O2',
    thickness   => 200,       # nm
    rate        => 120,       # nm/min nominal
    power       => 200,       # W
    pressure    => 30,        # mTorr
    bias        => 250,       # V (ion energy)
    anisotropy  => 0.9,
    feature_cd  => 300,
    mask        => 'photoresist',
    mask_thickness => 800,
    sel_mask    => 4,
    substrate   => 'silicon',
    sel_substrate => 8,
    overetch    => 0.20,
);

print $etch->report;

DESCRIPTION

Models plasma-based etching. The vertical rate scales from a nominal value with RF power, chamber pressure and DC self-bias (ion energy). Anisotropy is tuned by the balance of directional ion bombardment (bias, low pressure -> vertical) against isotropic radical attack (high pressure, low bias -> lateral), giving a process-dependent lateral rate and sidewall angle.

See Physics::Etch::Process for the inherited profile, selectivity, mask survival, over-etch and reporting methods.