/ 
Physics-Etch-0.01
/ Physics::Etch::Loading

NAME

Physics::Etch::Loading - macro / micro loading and ARDE (RIE-lag) models

SYNOPSIS

use Physics::Etch::Loading;

my $load = Physics::Etch::Loading->new( kappa => 0.012, arde_length => 6 );

# macro loading from a 25%-open pattern on a 300 cm^2 wafer
my $macro = $load->macro_factor_from_fraction( 0.25, 300 );   # < 1

# RIE lag: a feature at aspect ratio 5
my $lag = $load->arde_factor( 5 );                            # < 1

# or derive loading strength from chamber transport
my $load2 = Physics::Etch::Loading->from_chamber( $chamber );

DESCRIPTION

Provides the three rate-modifying effects that couple pattern and reactor to local etch behaviour:

  • Macro loading - global rate falls as total exposed area rises (Mogab's 1/(1+kappa*A)). Pair with Physics::Etch::Layout open fraction and Physics::Etch::Chamber wafer area.

  • Micro loading - local rate depends on local pattern density.

  • ARDE / RIE lag - narrow, high-aspect-ratio features etch slower (vertically) and taper, because lateral radical flux is less suppressed than the directional ion flux.