NAME

Physics::Etch::WetEtch - isotropic, temperature-activated wet etch model

SYNOPSIS

use Physics::Etch::WetEtch;

my $etch = Physics::Etch::WetEtch->new(
    target      => 'copper',
    etchant     => 'FeCl3',
    thickness   => 500,      # nm
    rate        => 800,      # nm/min at ref_temp
    ref_temp    => 25,       # degC
    Ea          => 0.43,     # eV
    temperature => 40,       # degC (run hotter -> faster)
    feature_cd  => 2000,     # nm mask opening
    mask        => 'photoresist',
    mask_thickness => 1200,
    sel_mask    => 40,
    overetch    => 0.30,
);

print $etch->report;

DESCRIPTION

Models a liquid-chemistry etch. Rate follows an Arrhenius temperature law scaled from a reference rate, times optional linear concentration and agitation factors. The etch is (near-)isotropic, so lateral rate equals vertical rate times isotropy (default 1.0), producing undercut and sloped/rounded sidewalls.

See Physics::Etch::Process for the inherited profile, selectivity, and reporting methods.